WebDec 20, 2016 · In this study, we report the growth studies of InGaAs/InAlAs superlattices (SLs) with thin layer thicknesses which will be used for quantum cascade laser (QCL) structures, grown by Metal Organic... Webmeaningful analysis of InAlGaAs quantum well transition energies and deduce a band gap relation for the bulk mate-rial, it is necessary to prepare samples in a way that allows the …
Modeling and process control of MOCVD growth of InAlGaAs MQW structures ...
WebOct 4, 2011 · InAlGaAs QWs designed to provide a gain peak at 795 nm at 358 K with variant indium and aluminum compositions, variant thicknesses and fixed barriers of Al 0:3Ga 0:7As. The material gain increases with indium composition (compressive strain) and tends to saturate when the indium composition is higher than 10%. WebFor a fixed QW emission wavelength of 838 nm, the In composition in InGaAs QW is theoretically determined to be 2%, and a series design of InAlGaAs QWs with various In … portsmouth trailer sales portsmouth va
Strained InGaAs/InAlAs MQW electroabsorption modulators with …
WebNew InAlGaAs/AlGaAs SL structures with thin (close to 2 nm) quantum well layers and the highest possible (up to 35 %) concentrations of In within the QW layers were and quantum efficiency spectra obtained at lowered activation are presented at Figure 1, revealed a rather wide plateau in the vicinity of the maximum polarization WebAbstract:High-power, reliable operation of an InAlGaAs-based QW laser diode structure emitting near 731 nm and having a strained InAlGaAs active region is described. Threshold currents for coated 100 μm×1000 μm devices are 281 mA, and a peak power conversion efficiency of 41% is measured. Internal losses are measured to be 1.2 cm/sup -1/. WebOverview Fingerprint Abstract In this study, the gain-carrier characteristics of In 0.02 Ga 0.98 As and InAlGaAs quantum wells (QWs) of variant In and Al compositions with an emission wavelength of 838 nm are theoretically investigated. portsmouth township ohio